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Brand Name : original
Model Number : SI7232DN-T1-GE3
Certification : original
Place of Origin : original
MOQ : 1
Price : negotiation
Payment Terms : T/T, L/C
Supply Ability : 100,000
Delivery Time : 1-3working days
Packaging Details : carton box
Product Status : Active
Technology : MOSFET (Metal Oxide)
Configuration : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 25A
Rds On (Max) @ Id, Vgs : 16.4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Specifications of SI7232DN-T1-GE3
| TYPE | DESCRIPTION | 
| Category | Discrete Semiconductor Products | 
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Mfr | Vishay Siliconix | 
| Series | TrenchFET® | 
| Package | Tape & Reel (TR) | 
| Cut Tape (CT) | |
| Digi-Reel® | |
| Product Status | Active | 
| Technology | MOSFET (Metal Oxide) | 
| Configuration | 2 N-Channel (Dual) | 
| FET Feature | Logic Level Gate | 
| Drain to Source Voltage (Vdss) | 20V | 
| Current - Continuous Drain (Id) @ 25°C | 25A | 
| Rds On (Max) @ Id, Vgs | 16.4mOhm @ 10A, 4.5V | 
| Vgs(th) (Max) @ Id | 1V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 8V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 10V | 
| Power - Max | 23W | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Package / Case | PowerPAK® 1212-8 Dual | 
| Supplier Device Package | PowerPAK® 1212-8 Dual | 
| Base Product Number | SI7232 | 
Features of SI7232DN-T1-GE3
Applications of SI7232DN-T1-GE3
Environmental & Export Classifications of SI7232DN-T1-GE3
| ATTRIBUTE | DESCRIPTION | 
| RoHS Status | ROHS3 Compliant | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| ECCN | EAR99 | 
| HTSUS | 8541.29.0095 | 

|   | 
| SI7232DN-T1-GE3 2N CH Mosfet Array 20V 25A 23W PPAK 1212-8 Images | 
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